Free Registration: https://www.eventbrite.com/e/quantum-paradigm-for-machine-learning-tickets-470791669557 Synopsis: The area of quantum machine learning (QML) is a young one and is expanding quickly. QML builds artificial intelligence that utilises quantum technology to increase the efficiency and effectiveness of learning algorithms. In order to overcome the difficulties of merging quantum computation and machine learning and to advance our understanding in this field, strong interdisciplinary cooperation are required. The lecture's objectives are to introduce QML to the audience and to examine the field's scope as well as its technical difficulties. Speaker(s): Dr Chakrabarti, Vishnu S. Pendyala Virtual: https://events.vtools.ieee.org/m/333478

Recent advances and trends in lead-free solder joint reliability are presented in this study. Emphasis is placed on the design for reliability (DFR) and reliability testing and data analysis, including: Norton power creep constitutive equations and examples; the Wises two power creep constitutive equations and examples; the Garofalo hyperbolic sine creep constitutive equations and examples; and the Anand viscoplasticity constitutive equations and examples, with temperature and strain rate-dependent parameters. For reliability testing and data analysis, the Weibull and lognormal life distributions for lead-free solder joints under thermal-cycling and drop tests; the true Weibull slope, true characteristic life, and true mean life; and the linear acceleration factors for various lead-free solder alloys based on frequency and maximum temperature, dwell time and maximum temperature; and frequency and mean temperature will be presented. Some recommendations will also be provided. Speaker(s): John H Lau, Virtual: https://events.vtools.ieee.org/m/336536

5:30pm: complimentary food 6:15pm: presentation starts This presentation describes the IEEE standards work undertaken in the last six years on refining the testing requirements for devices with communications functions. The new P1613 draft harmonizes closely with the IEC requirements for electric utility equipment with some differences. Its harmonized Scope includes most utility-owned smart grid control equipment with a COM port. Updates were also made to the Protective Relaying Standards IEEE-C37.90.1, C37.90.2 and C37.90.3 to harmonize them with more modern testing requirements in the IEC with some differences Speaker(s): Jerry Ramie, 775 Montague Expressway, Milpitas, California, United States, 95035

Design Thinking, popularized by IDEO and the Stanford University d.School, is an incredibly valuable methodology for achieving unprecedented results in product development, project management, business leadership, and beyond. While it’s natural to assume that design thinking would mean “thinking about design” – and that does describe some of what goes on in this process – that’s somewhat misleading. A “leap year” isn’t a whole year of leaping, and design thinking is more than design. It is an approach that goes beyond problem-solving to “thinking from the future” in order to invent solutions that would be difficult to discover by problem-centric approaches. Both design thinking and Scrappy Project Management© share an obsession with “the customer”. And both start by “thinking from the future” rather than getting stuck in the current situation, hampered by self-limiting beliefs about what’s possible. Rather than using the classic design thinking model of Empathize – Define – Ideate – Prototype – Test, let’s use a cycle that’s a bit easier to remember: Why? – Who? – What? – How? - Rather than instinctively jumping to HOW to solve a “problem”, start with WHY – Why is this project important? Dig deeply to find an inspiring purpose beyond profit. - Next explore WHO – who cares, who’s impacted, who’s involved, and who’s judging the success of your project? The empathy map & personna are powerful tools to bring stakeholders to life. - Then move on to WHAT – what outcomes would go beyond “solving a problem” to surprise and delight your stakeholders? Use lateral thinking to imagine the future, and then create it. - Use the power of cross pollination to explore and expand possibilities beyond the obvious solutions to the truly remarkable. - Design and rapidly prototype HOW to achieve the desired outcomes and delight your stakeholders. Get feedback early and often from a wide variety of people, then iterate. Using the WHY – WHO – WHAT – HOW cycle as a guide makes this powerful approach easy to remember and accessible to all project teams, even if you are not expert in design thinking. “Design thinking helps us appreciate and make sense of the complex connections between people, places, objects, events, and ideas. This is the most powerful driver of innovation. It’s what guides long-range strategic planning. It’s what shapes business decisions that have to be based on future opportunities rather than past events.” – Idris Mootee, (http://www.amazon.com/Design-Thinking-Strategic-Innovation-Business/dp/1118620127/) KEY LEARNINGS: - Avoiding the “Rush to Solution”. - Discovering the Big WHY purpose for any project. - Focusing on the key stakeholders who will judge your project’s success. - Defining “success”, and the measures of that success, through the eyes of your key stakeholders. - Embracing necessary risk-taking, learning from mistakes, experimenting, prototyping and “failing forward”. FORMAT: Never one to lecture, Kimberly facilitates lively and engaging “learning laboratories”. You will leave this workshop equipped with practical methodologies, tools & techniques that you can immediately apply to achieve significantly better results . . . even unprecedented breakthroughs! Speaker(s): Kimberley Wiefling, Virtual: https://events.vtools.ieee.org/m/342811

Abstract: We have entered the era of AI, brought about by three converging forces, including the availability of big data, the invention of deep learning algorithms, and high-performance computing accelerated by GPU. Meanwhile, 5G mobile communication systems are becoming increasingly complex due to the adoption of advanced technology features and the need to support various services with stringent performance requirements. AI has emerged as a powerful technology that improves system performance and enables new functions in 5G-Advanced and 6G. As 3GPP is ramping up AI items for the 5G-Advanced evolution, we anticipate that AI adoption in mobile networks will accelerate beyond proprietary solutions in the coming years. This talk will provide a state-of-the-art overview of AI use in mobile networks by describing the basic concepts, reviewing the recent key advances, discussing details of the 3GPP standardization aspects, and sharing various design rationales influencing standardization. Biography Xingqin Lin is a Senior Standards Engineer at NVIDIA, leading 3GPP standardization and conducting research at the intersection of 5G/6G and AI. Before joining NVIDIA, he was with Ericsson, leading 5G/6G research and standardization in focus areas. He was a member of the Ericsson NextGen Advisory Board, collaborating with Ericsson Executive Team on strategic projects. He is an expert in wireless communications and technology strategy and a key contributor to 5G NR, NB-IoT, and LTE standards. His pioneering work has led to strategic opportunities, products, and real-world deployments in the telecom industry, enabling major network transitions from 4G to 5G. He is co-author of the book “Wireless Communications and Networking for Unmanned Aerial Vehicles” and the lead editor for the book “5G and Beyond: Fundamentals and Standards.” He has published 80+ refereed papers and contributed to 200+ patent applications, including standards essential inventions. His publications have been cited over 7,000 times. He has garnered several awards, including the IEEE Communications Society Fred W. Ellersick Prize (2021), IEEE Vehicular Technology Society Early Career Award (2021), IEEE WCNC Best Paper Award (2020), and IEEE Communications Society Best Young Professional Award in Industry (2020), among others. He was included in the list of AI 2000 Most Influential Scholars in the field of Internet of Things (2021 & 2022) and the list of the World’s Top 2% Scientists (2020 & 2021). He serves/served as an editor of the IEEE Communications Letters (2015-2018), IEEE Communications Magazine (2022-now), IEEE Network (2021-now), IEEE Internet of Things Magazine (2021-now), and a guest editor for the IEEE Communications Magazine Feature Topic on “Aerial Communications,” IEEE Wireless Communications Special Issue on “AI-Powered Telco Network Automation: 5G Evolution and 6G,” and IEEE Journal on Selected Areas in Communications special issue on “3GPP technologies: 5G-Advanced and beyond.” He is an IET Fellow, an IEEE Senior Member, and an IET Fellow Assessor. He holds a Ph.D. in electrical and computer engineering from The University of Texas at Austin, USA. At time of event join us at https://simnet.zoom.us/j/97096131237?pwd=YWVhZTN5OW00ZkNmS2pMaVF3d0xZZz09 Co-sponsored by: Pradeep Kumar Virtual: https://events.vtools.ieee.org/m/337394

Performance requirements for today’s semiconductor and optoelectronic devices are leading to shrinking geometries, more complex 3-dimensional structures, and new materials. High temperatures, hot spots and temperature spikes can have a major impact on reliability. It is essential that one have a thorough understanding of static and dynamic thermal performance under operating and static conditions. This has traditionally been complex, time consuming, and often lacked the resolution required to detect thermal anomalies that could lead to early device failures. Fortunately, advances in thermal imaging techniques that combine the benefits of thermoreflectance-based analysis with illumination wavelengths from near-ultraviolet to near infrared coupled with infrared thermography can support thermal, spatial, and transient resolution consistent with today’s advanced complex device structures and shrinking geometries. In addition, equipment has advanced to considerably reduce the time and cost to get accurate results. Many examples will be shared to fully illustrate the device thermal behaviors that can be detected with these advanced thermal analysis techniques. Speaker(s): Mo Shakouri, SEMI World Hdqtrs, 673 S Milpitas Blvd, Milpitas, California, United States, 95035, Virtual: https://events.vtools.ieee.org/m/336546

Wide bandgap semiconductor devices based on GaN and SiC offer myriads of advantages over traditional Si-based devices for applications in power electronics. These advantages include, among others, faster switching capabilities, allowing for reduced filtering components within converter topologies, thus leading to improved power density. Despite their many advantages, several challenges related to technological readiness level have hindered the widespread adoption of these devices. At the device-physics level, for example, the theoretical high voltage capability of GaN has yet to be commercially realized. At the device-circuits level, the fast-switching capability of SiC, though generally a beneficial attribute, has led to undesirable injected harmonic content into power electronic converters, leading to detrimental circuit-behavior. For these reasons, advanced modeling, and characterization methods for both GaN and SiC are needed, so that these devices can realize their full performance entitlement. This talk will present a broad array of modeling and characterization methodologies for GaN and SiC semiconductors. Device physics simulations using finite element modeling techniques will be presented, demonstrating the high voltage capability of vertical GaN diodes. It will be shown how these types of models can lead to the design and fabrication of future high voltage and reliable vertical GaN devices. Analytical physics-based models of GaN diodes, based on first principles, will also be presented. For these types of models, tradeoffs between model-fidelity and convergence-time in circuit-simulations will be discussed. Behavioral models of SiC MOSFETs, based on mathematical curve-fitted equations, will then be presented. These models will demonstrate the need to capture the frequency-dependence of the device’s parasitic per-terminal junction capacitances, as well as that of the parasitic package inductances, in order to construct a comprehensive empirically validated high-fidelity circuit-simulation. New strategies that can enable the development of hybrid-physics and -behavioral models will be presented, in a manner that offers utility to both device fabrication engineers, as well as application-circuit designers. For the various types of models presented, the importance of the interplay and refinement between simulation and empirical validation will be emphasized. This talk will conclude with characterization techniques and opportunities for wide bandgap semiconductors in space. The work presented in this talk lends itself well to developing strategies for multilevel integrated modeling infrastructures of next generation GaN and SiC devices, and to aid in the design, fabrication, and implementation of future high-voltage and reliable wide and ultrawide bandgap semiconductors. Speaker(s): Prof. Raghav Khanna, Room: 4th Floor, Room 4021, Bldg: Sobrato Campus for Discovery and Innovation (SCDI), 500 El Camino Real, Santa Clara University’s Frugal Innovation Hub, Santa Clara, California, United States, 95053

The zoom meeting details for this event will be sent to registrants one day before the event on the email provided at registration. Abstract: Over the years, most of the manufactured electronic devices started to have at least one dimension in the nanometer scale. Concurrently, the non-equilibrium Green’s function (NEGF) framework has been broadly democratized to investigate quantum transport effects inside those devices. The latter framework has also proven its importance to correctly capture the underlining physics for the nano-scale devices. This talk will then discuss the latest development of atomistic quantum transport modelling for various emerging 2D materials-based devices. The first part of the talk will show an ab-initio approach that correctly captures the scattering mechanisms present in 2D FETs, combining the linearized Boltzmann Transport Equation (LBTE) and the NEGF formalism. Atomistic defect-variability study for 2D monolayer MoS2 FETs via many body defect-level corrections will also be presented. The second part will show the application of the ab-initio modeling framework to simulate Majorana transport, paving the way for topological qubits based on 2D nanoribbons. Atomistic modelling of van der Waals charge qubit manipulations and measurements in 2D materials will also be covered. Speaker(s): Dr. Youseung Lee, Agenda: Over the years, most of the manufactured electronic devices started to have at least one dimension in the nanometer scale. Concurrently, the non-equilibrium Green’s function (NEGF) framework has been broadly democratized to investigate quantum transport effects inside those devices. The latter framework has also proven its importance to correctly capture the underlining physics for the nano-scale devices. This talk will then discuss the latest development of atomistic quantum transport modelling for various emerging 2D materials-based devices. The first part of the talk will show an ab-initio approach that correctly captures the scattering mechanisms present in 2D FETs, combining the linearized Boltzmann Transport Equation (LBTE) and the NEGF formalism. Atomistic defect-variability study for 2D monolayer MoS2 FETs via many body defect-level corrections will also be presented. The second part will show the application of the ab-initio modeling framework to simulate Majorana transport, paving the way for topological qubits based on 2D nanoribbons. Atomistic modelling of van der Waals charge qubit manipulations and measurements in 2D materials will also be covered. Virtual: https://events.vtools.ieee.org/m/342765