The Electron Devices Society Santa Clara Valley/San Francisco joint Chapter is hosting Prof. Asif Khan. The title of the lecture is ‘Ferroelectronics for next generation memory and NAND storage technology’ When/Where: 19th Jan, 2024, 12 noon. Hybrid event (Venue: Atherton Room, Plug and Play Tech Center, 440 N Wolfe Rd, Sunnyvale, CA 94085) Note: MUST RSVP to attend in-person Registration: (https://events.vtools.ieee.org/m/398697) If you face an issue with vtools registration send an email to hiuyung.wong at ieee.org to get the zoom link and indicate whether you are an IEEE member, IEEE EDS member, IEEE Student member Contact: hiuyung.wong at ieee.org Speaker: Prof. Asif Khan Abstract: The rise of artificial intelligent (AI)-driven marvels hinges on the unrelenting advances in digital memory and storage solutions. The exponential trajectory of improvements of dynamic random-access memory (DRAM) and NAND flash, which are the mainstays of main memory and storage, respectively, is however facing formidable challenges at the technology level. In this talk, we will discuss the potential of the emerging ferroelectric technologies to upend the DRAM and NAND landscapes . We will highlight how ferroelectrics can enable the transition from 2-D to 3-D in DRAM technology and facilitate vertical scaling in NAND technology to achieve the 1000-layer milestone and beyond. We will also explore how ferroelectric devices can contribute to embedded and storage class memory technologies and examine the challenges they face. Asif Islam Khan, Ali Keshavarzi, and Suman Datta. “The future of ferroelectric field-effect transistor technology.” Nature Electronics 3.10 (2020): 588-597. Dipjyoti Das, Asif Khan et al. “Experimental Demonstration and Modeling of a Ferroelectric Gate Stack with a Tunnel Dielectric Insert for NAND Applications.” Proceedings of the 2023 IEEE International Electron Devices Meeting (IEDM). Nirmal Ramaswamy et al. “NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads.” Proceedings of the 2023 IEEE International Electron Devices Meeting (IEDM). Speaker Bio: Asif Khan is an Associate Professor in the School of Electrical and Computer Engineering with a courtesy appointment in the School of Materials Science and Engineering at Georgia Institute of Technology. Dr. Khan’s research focuses on ferroelectric materials and devices to address the challenges faced by the semiconductor technology due to the end of transistor miniaturization. His work led to the first experimental proof-of-concept demonstration of the ferroelecric negative capacitance, which can reduce the power dissipation in transistors. His recent interest is understanding and demonstrating the fundamental limits of memory technologies concerning their scalability, density, capacity, performance, and reliability. His group publishes research on topics that include both logic and memory technologies, as well as artificial intelligence and neuromorphic hardware. Dr Khan’s notable awards include the DARPA Young Faculty Award (2021), the NSF CAREER award (2021), the Intel Rising Star award (2020), the Qualcomm Innovation Fellowship (2012), TSMC Outstanding Student Research Award (2011) and University Gold Medal from Bangladesh University of Engineering and Technology (2011). Dr. Khan received the Class of 1934 CIOS Honor Roll award for excellence in teaching a graduate course on Quantum Computing Devices and Hardware in Fall 2020. He is presently serving as an editor at IEEE Electron Device Letters. In the past, he has also worked as an associate editor for IEEE Access, and as a technical program committee member for various conferences including IEEE International Electron Devices Meeting (IEDM) and Design Automation Conference (DAC), among others. ====================================================================== Speaker(s): Prof. Asif Khan Agenda: The Electron Devices Society Santa Clara Valley/San Francisco joint Chapter is hosting Prof. Asif Khan. The title of the lecture is ‘Ferroelectronics for next generation memory and NAND storage technology’ When/Where: 19th Jan, 2024, 12 noon. Hybrid event (Venue: Atherton Room, Plug and Play Tech Center, 440 N Wolfe Rd, Sunnyvale, CA 94085) Note: MUST RSVP to attend in-person Registration: (https://events.vtools.ieee.org/m/398697) If you face an issue with vtools registration send an email to hiuyung.wong at ieee.org to get the zoom link and indicate whether you are an IEEE member, IEEE EDS member, IEEE Student member Contact: hiuyung.wong at ieee.org Speaker: Prof. Asif Khan Abstract: The rise of artificial intelligent (AI)-driven marvels hinges on the unrelenting advances in digital memory and storage solutions. The exponential trajectory of improvements of dynamic random-access memory (DRAM) and NAND flash, which are the mainstays of main memory and storage, respectively, is however facing formidable challenges at the technology level. In this talk, we will discuss the potential of the emerging ferroelectric technologies to upend the DRAM and NAND landscapes . We will highlight how ferroelectrics can enable the transition from 2-D to 3-D in DRAM technology and facilitate vertical scaling in NAND technology to achieve the 1000-layer milestone and beyond. We will also explore how ferroelectric devices can contribute to embedded and storage class memory technologies and examine the challenges they face. Asif Islam Khan, Ali Keshavarzi, and Suman Datta. “The future of ferroelectric field-effect transistor technology.” Nature Electronics 3.10 (2020): 588-597. Dipjyoti Das, Asif Khan et al. “Experimental Demonstration and Modeling of a Ferroelectric Gate Stack with a Tunnel Dielectric Insert for NAND Applications.” Proceedings of the 2023 IEEE International Electron Devices Meeting (IEDM). Nirmal Ramaswamy et al. “NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads.” Proceedings of the 2023 IEEE International Electron Devices Meeting (IEDM). Speaker Bio: Asif Khan is an Associate Professor in the School of Electrical and Computer Engineering with a courtesy appointment in the School of Materials Science and Engineering at Georgia Institute of Technology. Dr. Khan’s research focuses on ferroelectric materials and devices to address the challenges faced by the semiconductor technology due to the end of transistor miniaturization. His work led to the first experimental proof-of-concept demonstration of the ferroelecric negative capacitance, which can reduce the power dissipation in transistors. His recent interest is understanding and demonstrating the fundamental limits of memory technologies concerning their scalability, density, capacity, performance, and reliability. His group publishes research on topics that include both logic and memory technologies, as well as artificial intelligence and neuromorphic hardware. Dr Khan’s notable awards include the DARPA Young Faculty Award (2021), the NSF CAREER award (2021), the Intel Rising Star award (2020), the Qualcomm Innovation Fellowship (2012), TSMC Outstanding Student Research Award (2011) and University Gold Medal from Bangladesh University of Engineering and Technology (2011). Dr. Khan received the Class of 1934 CIOS Honor Roll award for excellence in teaching a graduate course on Quantum Computing Devices and Hardware in Fall 2020. He is presently serving as an editor at IEEE Electron Device Letters. In the past, he has also worked as an associate editor for IEEE Access, and as a technical program committee member for various conferences including IEEE International Electron Devices Meeting (IEDM) and Design Automation Conference (DAC), among others. ====================================================================== Room: Atherton Room, Bldg: Plug and Play Tech Center, 440 N Wolfe Rd, Sunnyvale, California, United States, Virtual: https://events.vtools.ieee.org/m/398697

This presentation is about the very recent James Webb Space Telescope (JWST). Its major science objectives include: 1) Detect the first stars to ever emit light, 2) Show us how galaxies and stars were formed in the early universe and 3) Study planets orbiting other stars outside our solar system. It was successfully launched in 2021. It reached its orbital parking space at L2, a million miles away, slowly cooled down per plan, and completed all its commissioning tasks. It has been in operation since July 2022. Unlike the Hubble telescope which is taking images in the visible portion of the spectrum, this one takes images in the Near Infra Red (NIR) and the Mid Infra Red (MIR) portions of the spectrum. Infrared light is important to astronomy in three major ways. First, some objects are just better observed in infrared wavelengths. Some bodies of matter that are cool and do not emit much energy or visible brightness. Visible light’s short, tight wavelengths are prone to bouncing off dust particles, making it hard for visible light to escape from a dense nebula or protoplanetary cloud of gas and dust. The longer wavelengths of infrared light slip past dust more easily, and therefore instruments that detect infrared light—like those on Webb—are able to see the objects that emitted that light inside a dusty cloud. Low-energy brown dwarfs and young protostars forming in the midst of a nebula are among the difficult-to-observe cosmic objects that Webb can study. In this way, Webb will reveal a “hidden” universe of star and planet formation that is literally not visible. Finally, infrared light holds clues to many mysteries from the beginning of everything, the first stars and galaxies in the early universe, after the big bang. Through a process called cosmological redshifting, light is stretched as the universe expands, so light from stars that is emitted in shorter ultraviolet and visible wavelengths is stretched to the longer wavelengths of infrared light. Observation of these early days in the universe’s history will shed light on perplexing questions of dark matter and energy, black holes, galaxy evolution over time, what the first stars were like, and how we arrived at the universe we experience today. Our guest speaker is Bruce Steakley, who was the NIRCam Chief Systems Engineer and Program Manager. The NIR Cam has ten mercury-cadmium-telluride (HgCdTe) detector arrays. These are analogous to the silicon sensors found in ordinary digital cameras. The NIRCam is a science instrument but also an Optical Telescope Element wavefront sensor. It must be cooled to near absolute zero (K) temperature in order to eliminate most of the background noise benerated in the detectors. Fortunately that is easy to do in space. Bruce is now retired and he will take us through major observatory and NIRCam driving requirements with a deep dive into building NIRCam. Along the way, the talented teams faced significant challenges, some expected and some not. Good plans, ingenuity, attention to detail, perseverance, bad luck, and good luck all are part of the development story that led to its exceptional success. JWST images and science data are enabling a new era in astronomy. The focus of this talk will be primarily the engineering and development of the sensor sytem and not on the finished images taken from this telescope Meanwhile, work is already underway for another leap in technology and system capability beyond JWST. If you’re interested in an authoritative site on the JWST deployment timeline, its current status, and recent images; check this out: https://webb.nasa.gov/content/webbLaunch/whereIsWebb.html ############################################################################## This event is exclusively for in-person attendance, and walk-ins cannot be accommodated due to limited room capacity. The specific address will be provided to those who have registered up to the morning of the event. We will attempt to make a simultaneous broadcast on zoom but we are not vertain it will work well. We will send the zoom link to everyone who registers. Participation in the event entails a fee of $5 for each adult (18+) who wishes to avail themselves of the dinner provided. Additionally, attendees have the option to bring up to three children (14-17 years old) to the dinner at no extra cost. Registration for the presentation-only segment is free. (Please do not bring children younger than 14). Agenda: Dinner: 6-7pm (registration required, $5 per adult. If you plan to bring children, kindly register them as well but they are free. Presentation: 7:00pm - 8:30pm (registration is required, but if no meal is needed then admission will be free) Co-sponsored by: Life Members Affinity Group of the SCV Section Speaker(s): Bruce Steakley Agenda: Dinner: Jan 19 6:00pm to 7:00pm Presentation: 7:00pm to 8:30pm Sunnyvale, California, United States, Virtual: https://events.vtools.ieee.org/m/389814