Nano Journal Club (11:30 am - 12 noon) Nano Journal Club is hosting a discussion of the article titled: (https://stats.sender.net/link_click/FRPfAVdc3N_BGeds/dfa65620596de66beb5b39ac6343e192) https://stats.sender.net/link_click/FRPfAVdc3N_BGeds/dfa65620596de66beb5b39ac6343e192 Attendees are encouraged to participate in the Nano Journal Club discussion. You can access the paper using the embedded link. Seminar (12:10 pm - 12:55 pm): Atomic Layer Deposition of 2D Dichalcogenides at Wafer Scale 2D Transition metal dichalcogenide (TMD) materials have opened a route to continue the down-scaling trend of semiconductor technology. The synthesis of conformal high quality 2D TMDs on 300 mm wafers is required to unlock the potential application of these materials in electronic devices. EMD Electronics is establishing a platform for TMD development using atomic layer deposition (ALD). The talk will be focusing on 300 mm wafer-scale ALD deposition of TMD materials at temperatures ranging from 350 to 600 °C. The proposed ALD approach contributes to the efforts in developing high-quality 2D TMD materials that offer high performance and meet the down-scaling demand. In the past 3 years, Thong and the EMD Electronics Team at San Jose have been developing an ALD 2D materials platform focusing on TMDs for high mobility channel and Cu barrier/liner applications Dr. Thong Ngo is an R&D engineer at EMD Electronics. Thong finished his Ph.D. in Chemical Engineering from The University of Texas at Austin in 2015. His Ph.D. work explored functional crystalline oxides on Si and Ge for electronics using atomic layer deposition (ALD). Thong joined Intermolecular Inc., a subsidiary of EMD Electronics, in 2015 where he has been working on materials process development, characterization, and integration for memory applications. Hybrid Event This will be a Hybrid Event {In-Person & Zoom linked] Those planning to attend in person should arrive early. They will need to complete an electronic check-in before being admitted into Intermolecular. Enter the rear of the building from Orchard Parkway. You should park on the back side off of Orchard Parkway. If you will be unable to arrive in-person before the seminar starts - please plan on joining via Zoom All ticket registrants will be sent Zoom links before the event. Information will be sent to the email address entered when you register. Agenda: Agenda 11:30 AM - 12:00 PM Nano Journal Club Lincoln Bourne --------------------------------------------------------------- The following paper will be discussed: "Challenges for Nanoscale CMOS Logic Based on 2D Materials" 12:00 PM - 12:10 PM Introduction; Announcements and Speaker Introduction Glenn Friedman 12:10 PM - 12:55 PM Seminar Thong Ngo 12:55 PM - 1:15 PM Q & A Intermolecular Inc, 3011 North First Street, San Jose, California, United States, 95134, Virtual: https://events.vtools.ieee.org/m/357715

Two-dimensional materials hold great promise for future nanoelectronics. Their atomic thickness enables highly scaled field-effect transistors with reduced short-channel effects and relatively high carrier mobility. In this presentation, the electrical and optical properties of 2D transition metal dichalcogenides (TMDs such as MoS 2 , WSe 2 , ReSe 2 , PtSe 2 , and PdSe 2 ), GeAs, and black phosphorus are discussed. The intrinsic electrical transport properties of 2D materials are commonly investigated using back-gated field-effect transistors, due to the low density of process-induced defects and the easy fabrication. Electrical transport, modulation of the conductivity by a back-gate, effect of electron irradiation, environmental pressure and surface adsorbates, and photoresponse are investigated in TMD nanosheets obtained by either mechanical exfoliation or chemical vapor deposition on SiO 2 /Si substrates. It is shown that the contact resistance can be tuned by electron irradiation, which reduces the Schottky barrier and improves the 2D material/metal contact. It is demonstrated that adsorbates can change the polarity of the charge carriers and enhance the hysteresis in the transfer characteristics of TMD-based field-effect transistors. It is reported that several 2D materials exhibit strong photoresponse due to their direct bandgap and density of states that favour the interaction with light. Time-resolved photocurrent measurements demonstrate that many 2D based devices exhibit slow or persistent photoresponse that is attributed to intrinsic or extrinsic trap states, photobolometric effect and desorption of adsorbates. It is highlighted how positive and negative photoconductivity can coexist in the same 2D-based device, the dominance of one type over the other being controlled by O 2 and H 2 O adsorbates. The strong dependence of the channel conductance on electrical stress, air pressure, gas type, and light make 2D materials-based devices suitable for memory, gas, and light sensing applications. Finally, as the tunable conductivity and the sharp-edge geometry facilitate the extraction of electrons under the application of an electric field, it is proved that several 2D materials are also effective field emitters and that their emission current can be modulated by a back-gate. Virtual: https://events.vtools.ieee.org/m/358495

What is the intended current return path? That is a common question for EMC engineer. Why current return path matters for controlling EMI? Is the current return path always following the least inductance path in high frequency? These are the questions you may get answers from this technical webinar from Dr. Lam. Speaker(s): Cheung-Wei Lam, Virtual: https://events.vtools.ieee.org/m/351483

Hybrid Meeting On-line and In Person at Quadrant Refreshments will be available at Quadrant prior to the start of the presentation. Nanoelectronics combines physical principles of materials with the impressive capability of engineering ultra-small devices at the nanoscale. Magnetic field sensors—in particular, magnetoresistive (MR) sensors—were driven by the technological push from computers and information storage in the early 1990s. In this talk, Professor de Freitas will first introduce key concepts in spintronics and highlight the physical mechanisms defining sensor performance and the figures of merit for the classification of outstanding MR sensors. The impressive technological progress in thin film preparation and characterization, combined with nano- and microfabrication tools, offer a large spectrum for device design. The materials discussed include several varieties of thin films: oxide films as tunneling barriers, ultrathin amorphous and crystalline films, ultrathin textured layers with grain size control, magnetically soft layers, and antiferromagnetic films, all combined onto multilayer stacks, typically thinner than 60 nm in total. In addition, the noise mechanisms (the “killing factor” that limits MR sensor performance) will be discussed, and she will show successful strategies for improving the signal-to-noise ratio, which determines the ultimate field detectable by an MR sensor. Examples where spintronic sensors are useful tools for precision sensing will be provided, including integration with microfluidics, optical, and micro-electromechanical micromachined actuators. Detection principles, sensor design, simulations, and experimental validation will be discussed for exciting applications where MR sensors bring added value over competing technologies. She will show how challenging applications have inspired creative solutions, requiring joint skills in physics, materials, electronics, and mechanical engineering. Pr. de Freitas hopes that academics and engineers will be encouraged to propagate their expertise in magnetism to the young, talented people we see every day, and so promote innovation in future spintronic sensors. Speaker(s): Susana Cardoso de Freitas, PhD, , Bldg: Quadrant, 1120 Ringwood Ct., San Jose, California, United States, 95131, Virtual: https://events.vtools.ieee.org/m/355588